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HMC606LC5 Distributed Amplifier

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Description

Data Sheet GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18 GHz HMC606LC5 .
The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated.

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Features

* Ultralow phase noise:
* 160 dBc/Hz typical at 10 kHz Output power for 1 dB compression (P1dB): 15 dBm typical at 2 GHz to 12 GHz frequency range Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range Output third-order intercept (IP3): 27 dBm typical at 2 GHz to 12 GHz frequency range Suppl

HMC606LC5 Distributors

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HMC606LC5 Distributed Amplifier Analog Devices
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