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HMC457QS16GE, HMC457QS16G InGaP HBT

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Description

HMC457QS16G / 457QS16GE v03.0907 InGaP HBT 1 WATT POWER AMPLIFIER, 1.7 - 2.2 GHz 11 Typical Applications The HMC457QS16G / HMC457QS16GE is ideal f.
The HMC457QS16G & HMC457QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1 watt MMIC power amplifiers operating betwee.

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This datasheet PDF includes multiple part numbers: HMC457QS16GE, HMC457QS16G. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
HMC457QS16GE, HMC457QS16G
Manufacturer
Analog Devices ↗
File Size
499.37 KB
Datasheet
HMC457QS16G_HittiteMicrowaveCorporation.pdf
Description
InGaP HBT
Note
This datasheet PDF includes multiple part numbers: HMC457QS16GE, HMC457QS16G.
Please refer to the document for exact specifications by model.

Applications

* The HMC457QS16G / HMC457QS16GE is ideal for applications requiring a high dynamic range amplifier:
* CDMA & W-CDMA
* GSM, GPRS & Edge

HMC457QS16GE Distributors

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