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ADG636 - 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch

Description

The ADG636 is a monolithic device, comprising two independently selectable CMOS SPDT (Single Pole, Double Throw) switches.

When on, each switch conducts equally well in both directions.

Features

  • 1 pC Charge Injection ؎2.7 V to ؎ 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range:.
  • 40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (.

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Datasheet Details

Part number ADG636
Manufacturer Analog Devices
File Size 147.68 KB
Description 1 pC Charge Injection/ 100 pA Leakage CMOS 5 V/+5 V/+3 V Dual SPDT Switch
Datasheet download datasheet ADG636 Datasheet

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Full PDF Text Transcription

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a 1 pC Charge Injection, 100 pA Leakage CMOS ؎5 V/+5 V/+3 V Dual SPDT Switch ADG636 FUNCTIONAL BLOCK DIAGRAM ADG636 S1A 4 6 FEATURES 1 pC Charge Injection ؎2.7 V to ؎ 5.5 V Dual Supply +2.7 V to +5.5 V Single Supply Automotive Temperature Range: –40؇ C to +125؇C 100 pA (Max @ 25؇ C) Leakage Currents 85 ⍀ Typ On Resistance Rail-to-Rail Operation Fast Switching Times Typical Power Consumption (<0.
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