C4H2350N05 Datasheet (Ampleon) - Power GaN transistor

C4H2350N05, Power GaN transistor

5 W GaN packaged power transistor for base station applications.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit.

VDS = 48 V; IDq = 10 mA; unless otherwise specified.

Test signal f IDq VDS PL(AV) Gp D ACPR PL(3dB) (MHz) (mA) (V) (dB

C4H2350N05 Features

* Excellent digital pre-distortion capability

* High efficiency

* Designed for broadband operation

* Lower output capacitance for improved performance in applications

* For RoHS compliance see the product details on the Ampleon website 1.3 Applications

* RF power amplifier f