BLF8G22LS-200V Datasheet (Ampleon) - Power LDMOS transistor

BLF8G22LS-200V, Power LDMOS transistor

200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit, tested on straight lead device.

Test signal

BLF8G22LS-200V Features

* Excellent ruggedness

* High efficiency

* Low Rth providing excellent thermal stability

* Designed for broadband operation

* Decoupling leads to enable improved video bandwidth (80 MHz typical)

* Lower output capacitance for improved performance in Doherty applications