Datasheet Details
- Part number
- BLF8G19LS-170BV
- Manufacturer
- Ampleon
- File Size
- 415.05 KB
- Datasheet
- BLF8G19LS-170BV-Ampleon.pdf
- Description
- Power LDMOS transistor
BLF8G19LS-170BV Description
BLF8G19LS-170BV Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.
BLF8G19LS-170BV Features
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (100 M
BLF8G19LS-170BV Applications
* at frequencies from 1800 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal
f
IDq
VDS PL(AV)
Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA [1]
1930 to 1990
1300 32 60
18.
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