BLF8G19LS-170BV Datasheet (Ampleon) - Power LDMOS transistor

BLF8G19LS-170BV, Power LDMOS transistor

170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal f IDq VDS PL(AV) Gp D ACPR

BLF8G19LS-170BV Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (100 M