BLC9G20LS-120V - Power LDMOS transistor

Description

120 W LDMOS power transistor with enhanced video bandwidth for base station applications at frequencies from 1805 MHz to 1995 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

• Excellent ruggedness.
• High efficiency.
• Low thermal resistance providing excellent thermal stability.
• Decoupling leads to enable enhanced video bandwidth performance (75 MHz typical).
• Designed for broadband operation (1805 MHz to 1995 MHz).
• Lower output capacitance for improved performance in Dohe.