BLC10M6XS200 Datasheet (Ampleon) - Power LDMOS transistor

BLC10M6XS200, Power LDMOS transistor

200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz.

The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package.

Table 1.

Typical performance RF performance at VDS = 28 V; IDq = 350 mA; Tcase = 25

BLC10M6XS200 Features

* High efficiency

* Easy power control

* Excellent ruggedness

* Excellent thermal resistance due to copper flange

* Integrated ESD protection

* Designed for broadband operation (425 MHz to 450 MHz)

* Internally input matched

* Compliant to Directive 2002/95/EC, regard