Datasheet Details
| Part number | DMJxxxx |
|---|---|
| Manufacturer | Alpha |
| File Size | 149.25 KB |
| Description | Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes |
| Datasheet |
 DMJxxxx Datasheet
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| Part number | DMJxxxx |
|---|---|
| Manufacturer | Alpha |
| File Size | 149.25 KB |
| Description | Silicon Beam-Lead and Chip Schottky Barrier Mixer Diodes |
| Datasheet |
DMJxxxx Datasheet
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Alpha beam lead and chip Schottky barrier mixer diodes are designed for applications through 40 GHz in Ka band. lead design eliminates the problem of bonding to the very small junction area that is characteristic of the low capacitance involved in microwave devices. lead Schottky barrier mixer diodes are made by the deposition of a suitable barrier metal on an epitaxial silicon substrate to form the junction.
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