AOD419 - P-Channel MOSFET

Alpha & Omega

Datasheet Details

The AOD419 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

VDS (V) = -40V (V GS = -10V) ID = -20A RDS(ON) < 40mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current C Avalanche Current Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B C Maximum -40 ±20 -20 -18 -60 -20 60 50 25 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TA=25°C G TA=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=.

📁 AOD419 Similar Datasheet

Other Datasheets by Alpha & Omega

Published: Dec 30, 2006 |