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AOZ32101MDV - 100V 2.5A Half-bridge Gate Driver

General Description

AOZ32101MDV is a 100 V half-bridge gate driver that has an integrated bootstrap diode and is designed with shoot-through protection to drive high-side and low-side N-channel MOSFETs safety.

Key Features

  • Drives half bridge, dual N-channel MOSFET.
  • Integrated bootstrap diode.
  • 120 V max. bootstrap voltage.
  • Input signal overlap protection.
  • Typical 30 ns propagation delay time.
  • Drive 1 nF load with 13 ns rise/fall times with 12 V VDD.
  • TTL compatible input.
  • Typical 180 μA quiescent current.
  • Less than 5 μA shutdown current.
  • UVLO for both high-side and low-side.
  • DFN 3 mm x 3 mm 10 pin Packages Applicatio.

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AOZ32101MDV 100 V, 2.5 A Half-bridge Gate Driver General Description AOZ32101MDV is a 100 V half-bridge gate driver that has an integrated bootstrap diode and is designed with shoot-through protection to drive high-side and low-side N-channel MOSFETs safety. The sufficient drive capability and fast rise/fall times support system operate at high frequencies or multiple MOSFETs in parallel. Built in under voltage lock-out protection pulls the high/low-side output low when the supply voltage is insufficient. Features • Drives half bridge, dual N-channel MOSFET • Integrated bootstrap diode • 120 V max.