AOTF2N60, AOT2N60 Datasheet - Alpha & Omega Semiconductors

AOTF2N60 2A N-Channel MOSFET

The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted.

AOTF2N60 Features

* VDS (V) = 700V @ 150°C ID = 2A RDS(ON) < 4.4Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested! TO-220 Top View TO-220F D G D G S D G S S Absolute Maximum Ratings TA=25°C unless otherwise noted AOT2N60 Parameter AOTF2N60 Symbol VDS Drain-Source Voltage 600 VGS ±

AOT2N60_AlphaOmegaSemiconductors.pdf