Description
The AOT2N60 & AOTF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
Features
- VDS (V) = 700V @ 150°C ID = 2A RDS(ON) < 4.4Ω
(VGS = 10V)
100% UIS Tested! 100% R g Tested! C iss , C oss , C rss Tested!
TO-220
Top View
TO-220F
D
G
D
G S
D
G S S
Absolute Maximum Ratings TA=25°C unless otherwise noted AOT2N60 Parameter AOTF2N60 Symbol VDS Drain-Source Voltage 600 VGS ±30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
C
Units V V A A mJ mJ V/ns W W/ oC °C °C
TC=25°C TC=100°C
ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL
2 1.6 8 2 60 120 5 74 0.6 -50.
AOT2N60_AlphaOmegaSemiconductors.pdf
