Datasheet4U Logo Datasheet4U.com

AOD464 - 105V N-Channel MOSFET

General Description

The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications.

Key Features

  • es VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 mW (VGS =10V) @ 20A RDS(ON) < 31 mW (VGS = 6V) 100% UIS Tested 100% Rg Tested TO-252 Top View D-PAK Bottom View D D G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR TC=25°C Power Dissipation B TC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AOD464 N-Channel MOSFET INCHANGE
AOD464 N-Channel MOSFET VBsemi
AOD468 N-Channel MOSFET INCHANGE
AOD400 N-channel 30V MOSFET VBsemi
AOD403 P-Channel MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AOD460 N-Channel MOSFET
AOD466 N-Channel MOSFET
AOD468 11.5A N-Channel MOSFET
AOD400 N-Channel MOSFET
AOD402 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AOD464 105V N-Channel MOSFET General Description The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. -RoHS Compliant -Halogen Free* Features VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 mW (VGS =10V) @ 20A RDS(ON) < 31 mW (VGS = 6V) 100% UIS Tested 100% Rg Tested TO-252 Top View D-PAK Bottom View D D G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.