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AO7600 MOSFET

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Description

AO7600 Complementary Enhancement Mode Field Effect Transistor General .
The AO7600/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

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Features

* n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V) p-channel -20V -0.6A (VGS=-4.5V) RDS(ON) RDS(ON) < 300mΩ (VGS=4.5V) < 550mΩ (VGS=-4.5V) < 350mΩ (VGS=2.5V) < 700mΩ (VGS=-2.5V) < 450mΩ (VGS=1.8V) < 950mΩ (VGS=-1.8V) SC-70-6 (SOT-323) Top View D1 D2 GG S1 1 6 G1 2 5 D2 3 4 D1 G2 S2 S1 n-channel

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