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AO6802 - 30V Dual N-Channel MOSFET

General Description

The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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AO6802 30V Dual N-Channel MOSFET General Description The AO6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 3.5A < 50mΩ < 70mΩ TSOP6 D1 Top View Bottom View Top View G1 1 S2 2 6 D1 5 S1 G2 3 4 D2 G1 G2 Pin1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 3.5 3 20 1.15 0.