Datasheet Details
- Part number
- AO5803E
- Manufacturer
- Alpha & Omega Semiconductors
- File Size
- 107.84 KB
- Datasheet
- AO5803E-AlphaOmegaSemiconductors.pdf
- Description
- Dual P-Channel Enhancement Mode Field Effect Transistor
AO5803E Description
AO5803E Dual P-Channel Enhancement Mode Field Effect Transistor General .
The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.
AO5803E Features
* VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 0.8Ω (VGS = -4.5V) RDS(ON) < 1.0Ω (VGS = -2.5V) RDS(ON) < 1.25Ω (VGS = -1.8V)
ESD PROTECTED
S1 G1
D2
SC-89-6
D1 G1 G2
D1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Vol
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