Datasheet4U Logo Datasheet4U.com

AO4611 - MOSFET

General Description

The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

Standard Product AO4611 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 25m Ω (VGS=10V) < 30m Ω (VGS=4.5V) p-channel -60V -4.9A (VGS = -10V) RDS(ON) < 42mΩ (VGS = -10V) < 52mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www. DataSheet4U. com D1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 S2 G1 S1 SOIC-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 60 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-ch.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO4611 Dual-Channel MOSFET VBsemi
AO4612 Dual-Channel MOSFET VBsemi
AO4613 N- and P-Channel 30V MOSFET VBsemi
AO4614 40V P-Channel and N-Channel MOSFET UMW
AO4614B 40V Dual P + N-Channel MOSFET Alpha & Omega Semiconductor

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO4610 MOSFET
AO4612 MOSFET
AO4613 MOSFET
AO4614 MOSFET
AO4614A MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO4611 Complementary Enhancement Mode Field Effect Transistor General Description The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4611 is Pb-free (meets ROHS & Sony 259 specifications). AO4611L is a Green Product ordering option. AO4611 and AO4611L are electrically identical. Features n-channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 25m Ω (VGS=10V) < 30m Ω (VGS=4.5V) p-channel -60V -4.9A (VGS = -10V) RDS(ON) < 42mΩ (VGS = -10V) < 52mΩ (VGS = -4.5V) D2 S2 G2 S1 G1 www.DataSheet4U.