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AO4494 - 30V N-Channel MOSFET

General Description

The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is for PWM applications.

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AO4494 30V N-Channel MOSFET General Description The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications. Product Summary VDS (V) = 30V ID = 18A RDS(ON) < 6.5mΩ RDS(ON) < 9.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View D D D D SOIC-8 Bottom View D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=70°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH C ID IDM IAR EAR Power Dissipation B TC=25°C TC=70°C PD Junction and Storage Temperature Range TJ, TSTG G Maximum 30 ±20 18 14 130 32 51 3.