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AO4494
30V N-Channel MOSFET
General Description
The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications.
Product Summary
VDS (V) = 30V ID = 18A RDS(ON) < 6.5mΩ RDS(ON) < 9.5mΩ
(VGS = 10V) (VGS = 10V) (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
Top View
D D D D
SOIC-8 Bottom View
D
G
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=70°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM IAR EAR
Power Dissipation B
TC=25°C TC=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
G
Maximum 30 ±20 18 14 130 32 51 3.