The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AO4468
30V N-Channel MOSFET
General Description
The AO4468 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
* RoHS and Halogen-Free Compliant
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V)
ESD Protected 100% UIS Tested 100% Rg Tested
30V 10.5A < 17mW < 23mW
Top View
D D D D
SOIC-8 Bottom View
D G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.