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AO4413A - P-Channel FET

General Description

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Key Features

  • VDS (V) = -30V ID = -15A (V GS = -10V) RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) The AO4413A uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM.

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AO4413A P-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = -30V ID = -15A (V GS = -10V) RDS(ON) < 7mΩ (VGS = -20V) RDS(ON) < 8.5mΩ (VGS = -10V) The AO4413A uses advanced trench technology to excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard product AO4413A is Pb-free (meets ROHS & Sony 259 specifications). AO4413AL is a Green Product ordering option. AO4413A and AO4413AL are electrically identical.