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AS29F040 - 5V 512K x 8 CMOS FLASH EEPROM

General Description

Selected by A9 = VID(11.5

12.5V), CE = OE = A1 = A6 = L, enabling outputs.

When A0 is low (VIL) the output data = 52h, a unique Mfr.

code for Alliance Semiconductor Flash products.

Key Features

  • single 5.0V power supply operation for read, write, and erase functions. Internally generated and regulate voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations during power transtitions. DATA polling of DQ7 or toggle bit (DQ6) may be used to detect end-of-program or erase operations. The device automatically resets to read mode after program and/or erase operations are completed. The AS29F040 resists accidental erasure or spurious.

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Datasheet Details

Part number AS29F040
Manufacturer Alliance Semiconductor
File Size 351.11 KB
Description 5V 512K x 8 CMOS FLASH EEPROM
Datasheet download datasheet AS29F040 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3UHOLPLQDU#LQIRUPDWLRQ ® $65<)373 89#845.ð;#&026#)ODVK#((3520 )HDWXUHV • Organization:512K words × 8 bits • Industrial and commercial temperature • Sector architecture - Eight 64K byte sectors - Erase any combination of sectors or full chip • Single 5.0±0.