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AS29F010 - 5V 128K x 8 CMOS FLASH EEPROM

Features

  • for in-system programmability are provided. The AS29F010 provides high performance with a maximum access time of 120, or 150 ns. Chip Enable ( CE), Output Enable (OE), and Write Enable (WE) pins allow easy interface with the system bus. Program, erase, and verify operations are controlled with an on-chip command register using a JEDEC standard Write State Machine approach to enter commands. Each command requires four write cycles to be executed. Address and data are latched internally during all.

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Datasheet Details

Part number AS29F010
Manufacturer Alliance Semiconductor
File Size 195.06 KB
Description 5V 128K x 8 CMOS FLASH EEPROM
Datasheet download datasheet AS29F010 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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# ® $65<)343 89#45;.ð;#&026#)ODVK#((3520 )HDWXUHV • Organization: 128K × 8 bits • Sector Erase architecture - Four 32K × 8 sectors • Single 5.0±0.5V power supply for read/write operations • High speed 120/150 ns address access time • Low power consumption: - 30 mA maximum read current - 50 mA maximum program current - 1.5 mA maximum standby current - 1 mA maximum standby current (low power) • 10,000 write/erase cycle endurance • JEDEC standard write cycle commands - protects data from accidental changes • Program/erase cycle end signals: - Data polling - DQ6 toggle • Low VCC write lock-out below 3.
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