AS1C4M16PL-70BIN - 64M CellularRAM AD-MUX Low Power PSEUDO SRAM

Product Overview

Alliance Semiconductor

Part number	AS1C4M16PL-70BIN
Manufacturer	Alliance Semiconductor
File Size	1.63 MB
Description	64M CellularRAM AD-MUX Low Power PSEUDO SRAM
Datasheet	AS1C4M16PL-70BIN Datasheet
Additional preview pages of the AS1C4M16PL-70BIN datasheet.

64M CellularRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

- 16-bit multiplexed address/data bus - Single device supports asynchronous and burst operation - Vcc, VccQ voltages: 1.7V-1.95V VCC 1.7V-1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 108 MHz (tCLK = 9.26ns) , 133MHz(tCLK = 7.5ns) Burst initial latency: 37.0ns (4 clocks) @ 108 MHz , 37.5ns (5 clocks) @ 133 MHz tACLK: 7ns @ 108 MHz , 5.5ns @ 133 MHz - Low power consumption: Asynchronous.

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Published: Aug 24, 2025 |