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AFP4435WS, AFP4435WS-Alfa - 30V P-Channel Enhancement Mode MOSFET

Alfa-MOS

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AFP4435WS Datasheet Preview — This datasheet PDF includes multiple part numbers: AFP4435WS, AFP4435WS-Alfa. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	AFP4435WS, AFP4435WS-Alfa
Manufacturer	Alfa-MOS
File Size	392.49 KB
Description	30V P-Channel Enhancement Mode MOSFET
Datasheet	AFP4435WS-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFP4435WS, AFP4435WS-Alfa. Please refer to the document for exact specifications by model.

AFP4435WS Product details

Description

AFP4435WS, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

ID=-9A,RDS(ON)=15mΩ@VGS=-10V.
ID=-7A,RDS(ON)=23mΩ@VGS=-4.5V.
Super high density cell design for extremely low RDS (ON).
SOP-8P package design.

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Published: Nov 26, 2018 |