Datasheet4U Logo Datasheet4U.com

AFP3911W - P-Channel Enhancement Mode MOSFET

Download the AFP3911W datasheet PDF. This datasheet also covers the AFP3911W-Alfa variant, as both devices belong to the same p-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFP3911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z -30V/-3A,RDS(ON)=68mΩ@VGS=-10V z -30V/-2A,RDS(ON)=88mΩ@VGS=-4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN2X2-6L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFP3911W-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP3911W
Manufacturer Alfa-MOS
File Size 522.20 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP3911W Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AFP02N8-000 General Purpose PHEMT Chip Alpha Industries
AFP02N8-212 General Purpose Packaged PHEMT Chips Alpha Industries
AFP02N8-213 General Purpose Packaged PHEMT Chips Alpha Industries
AFP2303AS23RG P-Channel MOSFET VBsemi
AFP2319AS23RG P-Channel MOSFET VBsemi

Other Datasheets by Alfa-MOS

Part Number Description
AFP3981 P-Channel MOSFET
AFP3993 P-Channel MOSFET
AFP3050S P-Channel Enhancement Mode MOSFET
AFP3056WS 30V P-Channel Enhancement Mode MOSFET
AFP3401AS P-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
Alfa-MOS Technology General Description AFP3911W, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN2X2-6L ) AFP3911W 30V P-Channel Enhancement Mode MOSFET Features z -30V/-3A,RDS(ON)=68mΩ@VGS=-10V z -30V/-2A,RDS(ON)=88mΩ@VGS=-4.
Published: |