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AFP2311 - 20V P-Channel Enhancement Mode MOSFET

Download the AFP2311 datasheet PDF (AFP2311-Alfa included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 20v p-channel enhancement mode mosfet.

Description

AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -20V/-4.0A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=100mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design.

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Note: The manufacturer provides a single datasheet file (AFP2311-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFP2311
Manufacturer Alfa-MOS
File Size 489.47 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFP2311 Datasheet

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFP2311, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( SOT-23-3L ) AFP2311 20V P-Channel Enhancement Mode MOSFET Features -20V/-4.0A,RDS(ON)=56mΩ@VGS=4.5V -20V/-3.2A,RDS(ON)=70mΩ@VGS=2.5V -20V/-2.8A,RDS(ON)=100mΩ@VGS=1.
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