AFP1913 Datasheet - Alfa-MOS

AFP1913 P-Channel MOSFET

AFP1913, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial.

AFP1913 Features

* z -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V z -20V/-0.5A, RDS(ON)= 800 mΩ@ VGS =-2.5V z -20V/-0.4A, RDS(ON)= 1600 mΩ@ VGS =-1.8V z Low Offset (Error) Voltage z Low-Voltage Operation z High-Speed Circuits z Low Battery Voltage Operation z SOT-363 package design Application z Drivers: Relays, Solenoids

AFP1913 Datasheet (506.19 KB)