AFP1601E Datasheet - Alfa-MOS

AFP1601E 20V P-Channel Enhancement Mode MOSFET

AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFP1601E Features

* -20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design

* in Low Battery Voltage Operation DFN1.0X0.6-3L package design Application

AFP1601E Datasheet (774.26 KB)