Datasheet Details
Part number:
AFP1601E, AFP1601E-Alfa
Manufacturer:
Alfa-MOS
File Size:
774.26 KB
Description:
20v p-channel enhancement mode mosfet.
Note:
This datasheet PDF includes multiple part numbers: AFP1601E, AFP1601E-Alfa.
Please refer to the document for exact specifications by model.
AFP1601E, AFP1601E-Alfa, 20V P-Channel Enhancement Mode MOSFET
AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria
AFP1601E Features
* -20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design
* in Low Battery Voltage Operation DFN1.0X0.6-3L package design Application
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