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AFN7798WS - 200V N-Channel Enhancement Mode MOSFET

Download the AFN7798WS datasheet PDF (AFN7798WS-Alfa included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 200v n-channel enhancement mode mosfet.

Description

AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • ID=1.5A,RDS(ON)=580mΩ@VGS=10V.
  • ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN7798WS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN7798WS
Manufacturer Alfa-MOS
File Size 594.41 KB
Description 200V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN7798WS Datasheet

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7798WS 200V N-Channel Enhancement Mode MOSFET Features  ID=1.5A,RDS(ON)=580mΩ@VGS=10V  ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3.3X3.
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