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AFN7716S - 30V N-Channel Enhancement Mode MOSFET

Download the AFN7716S datasheet PDF. This datasheet also covers the AFN7716S-Alfa variant, as both devices belong to the same 30v n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN7716S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • ID=10A,RDS(ON)=15mΩ@VGS=10V.
  • ID= 7A,RDS(ON)=17mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3.3X3.3-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN7716S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN7716S
Manufacturer Alfa-MOS
File Size 387.36 KB
Description 30V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN7716S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology General Description AFN7716S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3.3X3.3-8L ) AFN7716S 30V N-Channel Enhancement Mode MOSFET Features  ID=10A,RDS(ON)=15mΩ@VGS=10V  ID= 7A,RDS(ON)=17mΩ@VGS=4.5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  DFN3.3X3.
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