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AFN7002LKAS - N-Channel MOSFET

Download the AFN7002LKAS datasheet PDF (AFN7002LKAS-Alfa included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel mosfet.

Description

AFN7002LKAS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • z 60V/0.50A , R DS(ON)=1.6Ω@VGS=10V z 60V/0.40A , R DS(ON)=2.5Ω@VGS=4.5V z 60V/0.05A , R DS(ON)=4.5Ω@VGS=2.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z ESD Protection Diode design.
  • in z SOT-23 package design Pin.

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Note: The manufacturer provides a single datasheet file (AFN7002LKAS-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN7002LKAS
Manufacturer Alfa-MOS
File Size 373.75 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7002LKAS Datasheet

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Full PDF Text Transcription

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Alfa-MOS Technology AFN7002LKAS 60V N-Channel Enhancement Mode MOSFET General Description AFN7002LKAS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features z 60V/0.50A , R DS(ON)=1.6Ω@VGS=10V z 60V/0.40A , R DS(ON)=2.5Ω@VGS=4.5V z 60V/0.05A , R DS(ON)=4.5Ω@VGS=2.
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