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AFN6670S - N-Channel MOSFET

Download the AFN6670S datasheet PDF. This datasheet also covers the AFN6670S-Alfa variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN6670S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • z 60V/20A,RDS(ON)= 4.8mΩ@VGS=10V z 60V/15A,RDS(ON)= 6.0mΩ@VGS=6.0V z 60V/10A,RDS(ON)= 8.0mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN6670S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN6670S
Manufacturer Alfa-MOS
File Size 311.67 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN6670S Datasheet

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Full PDF Text Transcription

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Alfa-MOS Technology AFN6670S 60V N-Channel Enhancement Mode MOSFET General Description AFN6670S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 60V/20A,RDS(ON)= 4.8mΩ@VGS=10V z 60V/15A,RDS(ON)= 6.0mΩ@VGS=6.0V z 60V/10A,RDS(ON)= 8.0mΩ@VGS=4.
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