Datasheet Details
Part number:
AFN6506S, AFN6506S-Alfa
Manufacturer:
Alfa-MOS
File Size:
390.18 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: AFN6506S, AFN6506S-Alfa.
Please refer to the document for exact specifications by model.
AFN6506S, AFN6506S-Alfa, N-Channel MOSFET
AFN6506S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
AFN6506S Features
* z 30V/18A,RDS(ON)=2.5mΩ@VGS=10V z 30V/12A,RDS(ON)=3.5mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z Exceptional on-resistance and maximum DC current capability z DFN 5X6-8L package design BOTTOM VIEW Application z Synchronous Rectification z High Power Density DC/DC z VRM
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