Datasheet4U Logo Datasheet4U.com

AFN1520 - N-Channel Enhancement Mode MOSFET

Download the AFN1520 datasheet PDF. This datasheet also covers the AFN1520-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN1520, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Features

  • 100V/4.0A,RDS(ON)= 320mΩ@VGS=10V 100V/4.0A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1520-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1520
Manufacturer Alfa-MOS
File Size 574.36 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1520 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Alfa-MOS Technology AFN1520 100V N-Channel Enhancement Mode MOSFET General Description AFN1520, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features 100V/4.0A,RDS(ON)= 320mΩ@VGS=10V 100V/4.0A,RDS(ON)= 340mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) TO-220-3L package design Pin Description ( TO-220-3L ) Application High Frequency Boost Converter LED Backlight for LCD TV Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
Published: |