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AFN1010S - N-Channel Enhancement Mode MOSFET

Download the AFN1010S datasheet PDF. This datasheet also covers the AFN1010S-Alfa variant, as both devices belong to the same n-channel enhancement mode mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial applications.

Features

  • z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AFN1010S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number AFN1010S
Manufacturer Alfa-MOS
File Size 387.57 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AFN1010S Datasheet

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Full PDF Text Transcription

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Alfa-MOS Technology AFN1010S 100V N-Channel Enhancement Mode MOSFET General Description AFN1010S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial applications. Pin Description ( TO-220-3L ) Features z 100V/15A,RDS(ON)= 9mΩ@VGS=10V z 100V/10A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for low RDS (ON) z TO-220-3L package design Application z Power Supply - Secondary Synchronous Rectification z DC/DC converter z DC/AV inverter z Power tools z Motor drive switch Pin Define Pin 1 2 3 Symbol G D S Ordering Information Part Ordering No.
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