1N5817W Datasheet - AiT Semiconductor

1N5817W, SCHOTTKY DIODES

AiT Semiconductor Inc.
1N5817W~1N5819W www.ait-ic.com SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS DESCRIPTION The 1N5817W~1N5819W ar

Features

* Metal silicon junction, majority carrier conduction
* Guarding for overvoltage protection
* Low power loss, high efficiency
* High current capability
* low forward voltage drop
* High surge capability
* For use in low voltage, high frequency inverters, free wheeling, an

1N5817W-AiTSemiconductor.pdf