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ATF10736, ATF10736_Agilent(Hewlett 0.512 GHz General Purpose Gallium Arsenide FET

ATF10736 Description

www.DataSheet4U.com 0.5 * 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 .
The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package.

ATF10736 Features

* High Associated Gain: 13.0␣ dB Typical at 4␣ GHz
* Low Bias: VDS = 2 V, IDS = 25␣ mA
* High Output Power: 20.0␣ dBm typical P 1 dB at 4␣ GHz
* Low Noise Figure: 1.2␣ dB Typical at 4␣ GHz
* Cost Effective Ceramic Microstrip Package
* Tape-and-Reel Pac

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ATF10736, ATF10736_Agilent(Hewlett. Please refer to the document for exact specifications by model.

Datasheet Details

Part number
ATF10736, ATF10736_Agilent(Hewlett
Manufacturer
Agilent(Hewlett-Packard)
File Size
80.82 KB
Datasheet
ATF10736_Agilent(Hewlett-Packard).pdf
Description
0.512 GHz General Purpose Gallium Arsenide FET
Note
This datasheet PDF includes multiple part numbers: ATF10736, ATF10736_Agilent(Hewlett.
Please refer to the document for exact specifications by model.

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