HF30-28S NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

Description

HF30-28S NPN SILICON RF POWER TRANSISTOR .
The ASI HF30-28S is Designed for PACKAGE STYLE . PG = 20 dB min. IMD3 = -30 dBc.

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HF30-28S Datasheet Preview — Preview of HF30-28S PDF

Datasheet Specifications

Part number: HF30-28S
Manufacturer: Advanced Semiconductor
File Size: 17.88 KB
Datasheet: HF30-28S_AdvancedSemiconductor.pdf
Description: NPN SILICON RF POWER TRANSISTOR

Features

* PG = 20 dB min. at 30 W/30 MHz
* IMD3 = -30 dBc max. at 30 W (PEP)
* Omnigold™ Metalization System B C E ØC E B H I J D MAXIMUM RATINGS IC VCB VCE VEBO PDISS TJ T STG θ JC O O #8-32 UNC-2A F E G 5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 OC -65 C to +200 C -65 C to +150

HF30-28S Distributors

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HF30-28S NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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