HF10-12F NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

Description

HF10-12F NPN SILICON RF POWER TRANSISTOR .
The ASI HF10-12F is Designed for PACKAGE STYLE . PG = 20 dB min. IMD3 = -30 d.

📥 Download Datasheet

HF10-12F Datasheet Preview — Preview of HF10-12F PDF

Datasheet Specifications

Part number: HF10-12F
Manufacturer: Advanced Semiconductor
File Size: 18.31 KB
Datasheet: HF10-12F_AdvancedSemiconductor.pdf
Description: NPN SILICON RF POWER TRANSISTOR

Features

* PG = 20 dB min. at 10 W/30 MHz
* IMD3 = -30 dBc max. at 10 W (PEP)
* Omnigold™ Metalization System F E B C D E C E Ø.125 NOM. FULL R J .125 MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ T STG θ JC 4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 OC to +200 OC -65 C to +150 C 2.

HF10-12F Distributors

📁 Related Datasheet

HF1008 HF1008R HF102F HF105F-1 HF105F-2 HF105F-4

📌 All Tags

HF10-12F NPN SILICON POWER TRANSISTOR Advanced Semiconductor

Advanced Semiconductor HF10-12F-like datasheet