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AT12017-21 - SILICON ABRUPT VARACTOR DIODE

AT12017-21 Description

www.DataSheet4U.com AT12017-21 SILICON ABRUPT VARACTOR DIODE .
The AT12017-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.

AT12017-21 Features

* INCLUDE:
* High Tuning Ratio, ∆CT = 9.5 MIN.
* High Quality Factor, Q = 300 MIN.
* Hermetic Package, CP = .20 pF LS = .42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W O O O O CHARACTERISTICS SYMBOL VR VF

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Preview of AT12017-21 PDF

Datasheet Details

Part number
AT12017-21
Manufacturer
Advanced Semiconductor
File Size
48.44 KB
Datasheet
AT12017-21_AdvancedSemiconductor.pdf
Description
SILICON ABRUPT VARACTOR DIODE

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📌 All Tags

SILICON ABRUPT VARACTOR DIODE Advanced Semiconductor
Advanced Semiconductor AT12017-21-like datasheet