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MS1409 - RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS

Description

The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications.

Gold metalization and diffused emitter ballast resistors provide superior long term reliability.

Features

  • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB.

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Datasheet preview – MS1409

Datasheet Details

Part number MS1409
Manufacturer Advanced Power Technology
File Size 361.82 KB
Description RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS
Datasheet download datasheet MS1409 Datasheet
Additional preview pages of the MS1409 datasheet.

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www.DataSheet4U.com 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1409 RF & MICROWAVE TRANSISTOR VHF COMMUNICATIONS Features • • • • • 175 MHz 28 VOLTS POUT = 2.5 W GP = 10 dB MINIMUM COMMON EMITTER CONFIGURATION 1. Emitter 2. Base 3. Collector DESCRIPTION: The MS1409 is a NPN silicon transistor designed for high power gain VHF and UHF communication applications. Gold metalization and diffused emitter ballast resistors provide superior long term reliability. TO-39 ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol VCBO VCEO VEBO PDISS IC TJ TSTG Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Total Power Dissipation Collector Peak Current Junction Temperature Storage Temperature Value 65 40 4.0 7.0 1.
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