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MMBR911LT1 - NPN SILICON HIGH-FREQUENCY TRANSISTOR

Description

Designed for low noise, wide dynamic range front end amplifiers and low

noise VCO’s.

mountable plastic package.

signal plastic transistor offers superior quality and performance at low cost.

G Denotes Ro

Features

  • High Gain.
  • Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA.
  • Low Noise Figure NF = 1.7 dB (Typ) @ 500 MHz.
  • High Gain GNF = 17 dB (Typ) @ 10 mA/500 MHz.
  • State.
  • of.
  • the.
  • Art Technology Fine Line Geometry Ion.
  • Implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation.
  • Available in tape and reel packaging options: T1 suffix = 3,000 units per reel.

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Datasheet preview – MMBR911LT1

Datasheet Details

Part number MMBR911LT1
Manufacturer Advanced Power Technology
File Size 144.36 KB
Description NPN SILICON HIGH-FREQUENCY TRANSISTOR
Datasheet download datasheet MMBR911LT1 Datasheet
Additional preview pages of the MMBR911LT1 datasheet.

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Full PDF Text Transcription

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 NPN SILICON LOW NOISE, HIGH-FREQUENCY TRANSISTOR DESCRIPTION: Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This small–signal plastic transistor offers superior quality and performance at low cost. MMBR911LT1 MMBR911LT1G * G Denotes RoHS Compliant, Pb Free Terminal Finish FEATURES: • High Gain–Bandwidth Product fT = 7.0 GHz (Typ) @ 30 mA • Low Noise Figure NF = 1.
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