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APT5010JVRU3
500V 44A 0.100Ω
S G D A
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
SO
2 T-
27
"UL Recognized"
ISOTOP®
• Faster Switching • Lower Leakage • Single Die MOSFET & FRED
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage
• 100% Avalanche Tested • Popular SOT-227 Package • PFC "Buck" Configuration
G
D A S
All Ratings: TC = 25°C unless otherwise specified.
APT5010JVRU3 UNIT Volts Amps
500 44 176 ±30 ±40 450 3.
APT5010JVRU3 Datasheet
