2N2857 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Advanced Power Technology

The 2N2857 by Advanced Power Technology is a RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS. Below is the official datasheet preview.

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2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS by Advanced Power Technology - Datasheet Preview — Official preview page of the **2N2857** RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS datasheet (Advanced Power Technology).

Datasheet Details

Part number	2N2857
Manufacturer	Advanced Power Technology
File Size	120.91 KB
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Datasheet	2N2857_AdvancedPowerTechnology.pdf
Additional preview pages of the 2N2857 datasheet.

2N2857 Product details

Description

www.DataSheet4U.com The 2N2857 is a silicon NPN transistor, designed for UHF equipment.Applications include low noise amplifier; oscillator, and mixer applications.ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C) Symbol Parameter Value Unit VCEO VCBO VEBO PD IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Maximum Device Dissipation Collector Current 15 30 2.5 200 40 V V V mW mA Thermal Data RTH(J-C) Thermal Resistance Junction-case 0.88 º C/mW Advanced Power Technolo

Features

Silicon NPN, To-72 packaged UHF Transistor 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 Maximum Unilateral Gain = 13 dB (typ) @ 500 MHz 1 4 3 1. Emitter 2. Base 3. Collector 4. Case TO-72.

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Other Datasheets by Advanced Power Technology

Published: Jun 4, 2007 |