AP9998GS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP9998GS-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Lower Gate Charge ▼ Single Drive Requirement ▼ Fast Switching Characteristic ▼ Ro.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number: AP9998GS-HF
Manufacturer: Advanced Power Electronics
File Size: 79.50 KB
Datasheet: AP9998GS-HF_AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for switching power applications. GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current

AP9998GS-HF Distributors

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AP9998GS-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Advanced Power Electronics AP9998GS-HF-like datasheet