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AP9976GP N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP9976GP RoHS-compliant Product Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Characteristic G N-.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number
AP9976GP
Manufacturer
Advanced Power Electronics
File Size
144.88 KB
Datasheet
AP9976GP-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D TO-220(P) S Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 ±20 30 19 100 39 -55 to 150 -55 to 150

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