Datasheet4U Logo Datasheet4U.com

AP75T10GI-HF - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.

📥 Download Datasheet

Datasheet preview – AP75T10GI-HF

📁 Similar Datasheet

  • AP75T10GP-HF - N-Channel 100V MOSFET (VBsemi)
  • AP75T10BGP - N-Channel 100V MOSFET (VBsemi)
  • AP7583AQ - 300mA ULDO REGULATOR (DIODES)
  • AP7583Q - 300mA ULDO REGULATOR (DIODES)
  • AP75N04NF - 40V N-Channel Enhancement Mode MOSFET (APM)
  • AP75N10F - 100V N-Channel Enhancement Mode MOSFET (APM)
  • AP75N10P - 100V N-Channel Enhancement Mode MOSFET (APM)
  • AP75N10T - 100V N-Channel Enhancement Mode MOSFET (APM)
  • AP7000 - TELECOMMUNICATIONS TRANSFORMERS (apx)
  • AP7001 - TELECOMMUNICATIONS TRANSFORMERS (apx)
Other Datasheets by Advanced Power Electronics
  • AP75T10GI-HF-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP75T10GP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP75T10GP-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP75T10GP-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP75T10GS - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP75T10GS-3 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET
  • AP75T10GS-HF - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
  • AP75T10AGP - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Full PDF Text Transcription

Click to expand full text
AP75T10GI-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free G N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 100V 12mΩ 42A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS@10V Continuous Drain Current, V GS@10V Pulsed Drain Current 1 Rating 100 +20 42 26 160 44.
Published: |