AP6900GSM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP6900GSM Pb Free Plating Product DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement ▼ DC-DC Conv.
S1/D2 S1/D2 S1/D2 G1 SO-8 S2/A G2 D1 D1 CH-1 CH-2 BVDSS RDS(ON) ID BVDSS RDS(ON) ID The Advanced Power MOSFETs from APEC provide the designer wit.

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Datasheet Specifications

Part number: AP6900GSM
Manufacturer: Advanced Power Electronics
File Size: 130.40 KB
Datasheet: AP6900GSM-AdvancedPowerElectronics.pdf
Description: DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. D1 G1 N-Channel 1 MOSFET 30V 30mΩ 5.7A 30V 22mΩ 9.8A S1/D2 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuou

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AP6900GSM DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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