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AP60L02H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP60L02H Description

Advanced Power Electronics Corp.AP60L02H/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge ▼ Simple Drive Requirement D ▼ Fast Switchin.
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as D.

AP60L02H Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP60L02J) is available for low-profile applications. BVDSS RDS(ON) ID 25V 12mΩ 50A G D S TO-252(H) Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Vol

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Datasheet Details

Part number
AP60L02H
Manufacturer
Advanced Power Electronics
File Size
79.74 KB
Datasheet
AP60L02H-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP60L02H-like datasheet